Smooth glass insulating film over interconnects on an integrated

Details Smooth glass insulating film over interconnects on an integrated Smooth glass insulating film over interconnects on an integrated

1982-03-26

1984-12-25

Bell, Mark

Compositions: ceramic

Ceramic compositions

Glass compositions, compositions containing glass other than...

357 54, 501 55, 501 63, H01L 2330, H01L 2934, C03C 304

Patent

active

044907370

ABSTRACT:
A low temperature insulating glass for use in semiconductor devices comprises a mixture of germanium, silicon, oxygen and phosphorus. In the preferred embodiment, the glass comprises a mixture of about 40% to 55% silicon dioxide (SiO.sub.2), about 55% to 40% of germanium dioxide (GeO.sub.2) and from 1% to about 5% of phosphorus pentoxide (P.sub.2 O.sub.5), by mole percent.

REFERENCES:
patent: 4156250 (1979-05-01), Trap
patent: 4271582 (1981-06-01), Shirai et al.
patent: 4339173 (1982-07-01), Aggarwal et al.
patent: 4365264 (1982-12-01), Mukai et al.

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