Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-01-17
1993-10-05
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257231, 257250, 257435, 257635, H01L 29796, H01L 2714, H01L 3100
Patent
active
052508250
ABSTRACT:
A CCD imager wherein signal charge can be transferred at a high speed and smears can be minimized without employing a complicated wiring configuration. The CCD imager comprises a transfer electrode formed from a semiconductor layer, a light intercepting film formed from a first layer metal film on the transfer electrode, and a shunt wiring film formed from a second layer metal film on the first layer metal film. The transfer electrode and the shunt wiring film are electrically connected to each other by way of the light intercepting film. Also an improved CCD imager of the frame interline type is disclosed wherein a storage section is improved in light intercepting performance to prevent possible occurrence of smears at the storage section with a simplified configuration of wiring in the storage section.
REFERENCES:
patent: 5028972 (1991-07-01), Watanabe et al.
Negishi Michio
Yonemoto Kazuya
Munson Gene M.
Sony Corporation
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