Small volume process chamber with hot inner surfaces

Details Small volume process chamber with hot inner surfaces Small volume process chamber with hot inner surfaces

2006-03-07

2006-03-07

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C438S680000, C257S635000, C257S636000, C257S637000, C257S638000, C257S639000, C257S640000, C250S424000, C156S345240

Reexamination Certificate

active

07009281

ABSTRACT:
A system and method of processing a substrate including loading a substrate into a plasma chamber and setting a pressure of the plasma chamber to a pre-determined pressure set point. Several inner surfaces that define a plasma zone are heated to a processing temperature of greater than about 200 degrees C. A process gas is injected into the plasma zone to form a plasma and the substrate is processed.

REFERENCES:
patent: 4985113 (1991-01-01), Fujimoto et al.
patent: 5009738 (1991-04-01), Gruenwald et al.
patent: 5098516 (1992-03-01), Norman et al.
patent: 5198677 (1993-03-01), Leung et al.
patent: 5200031 (1993-04-01), Latchford et al.
patent: 5256565 (1993-10-01), Bernhardt et al.
patent: 5302241 (1994-04-01), Cathey, Jr.
patent: 5380397 (1995-01-01), Fukuyama et al.
patent: 5387315 (1995-02-01), Sandhu
patent: 5534751 (1996-07-01), Lenz et al.
patent: 5556714 (1996-09-01), Fukuyama et al.
patent: 5744402 (1998-04-01), Fukazawa et al.
patent: 5770100 (1998-06-01), Fukuyama et al.
patent: 5968847 (1999-10-01), Ye et al.
patent: 6004188 (1999-12-01), Roy
patent: 6008130 (1999-12-01), Henderson et al.
patent: 6051496 (2000-04-01), Jang
patent: 6056864 (2000-05-01), Cheung
patent: 6083822 (2000-07-01), Lee
patent: 6096230 (2000-08-01), Scatz et al.
patent: 6133144 (2000-10-01), Tsai et al.
patent: 6140226 (2000-10-01), Grill et al.
patent: 6147005 (2000-11-01), Tu et al.
patent: 6153116 (2000-11-01), Yang et al.
patent: 6153530 (2000-11-01), Ye et al.
patent: 6174813 (2001-01-01), Wang
patent: 6184128 (2001-02-01), Wang et al.
patent: 6221775 (2001-04-01), Ference et al.
patent: 6227140 (2001-05-01), Kennedy et al.
patent: 6234870 (2001-05-01), Uzoh et al.
patent: 6313025 (2001-11-01), Chittipeddi et al.
patent: 6323121 (2001-11-01), Liu et al.
patent: 6331380 (2001-12-01), Ye et al.
patent: 6350364 (2002-02-01), Jang
patent: 6350664 (2002-02-01), Haji et al.
patent: 6352081 (2002-03-01), Lu et al.
patent: 6365327 (2002-04-01), Chittipeddi et al.
patent: 6368517 (2002-04-01), Hwang et al.
patent: 6383935 (2002-05-01), Lin et al.
patent: 6408786 (2002-06-01), Kennedy et al.
patent: 6417093 (2002-07-01), Xie et al.
patent: 6423200 (2002-07-01), Hymes
patent: 6440840 (2002-08-01), Chen
patent: 6448176 (2002-09-01), Grill et al.
patent: 6475298 (2002-11-01), O'Donnell et al.
patent: 6479391 (2002-11-01), Morrow et al.
patent: 6482331 (2002-11-01), Lu et al.
patent: 6482755 (2002-11-01), Ngo et al.
patent: 6486059 (2002-11-01), Lee et al.
patent: 6500357 (2002-12-01), Luo et al.
patent: 6517413 (2003-02-01), Hu et al.
patent: 6527911 (2003-03-01), Yen et al.
patent: 6559049 (2003-05-01), Chen et al.
patent: 6573187 (2003-06-01), Chen et al.
patent: 6576550 (2003-06-01), Brase et al.
patent: 6579800 (2003-06-01), Basol et al.
patent: 6582974 (2003-06-01), Lui et al.
patent: 6600229 (2003-07-01), Mukherjee et al.
patent: 6617232 (2003-09-01), Kim et al.
patent: 6620726 (2003-09-01), Preusse et al.
patent: 6630413 (2003-10-01), Todd
patent: 6653224 (2003-11-01), Gotkis et al.
patent: 6767829 (2004-07-01), Akahori
patent: 2001/0003060 (2001-06-01), Yokohama et al.
patent: 2001/0015175 (2001-08-01), Masuda et al.
patent: 2001/0018271 (2001-08-01), Yanagisawa
patent: 2001/0054381 (2001-12-01), Umotoy et al.
patent: 2002/0016084 (2002-02-01), Todd
patent: 2002/0045354 (2002-04-01), Ye et al.
patent: 2002/0081854 (2002-06-01), Morrow et al.
patent: 2002/0121500 (2002-09-01), Annapragada et al.
patent: 2002/0124867 (2002-09-01), Kim et al.
patent: 2002/0153350 (2002-10-01), Lu et al.
patent: 2002/0155695 (2002-10-01), Lee et al.
patent: 2002/0175071 (2002-11-01), Hymes
patent: 2002/0182853 (2002-12-01), Chen et al.
patent: 2002/0187627 (2002-12-01), Yuang
patent: 2002/0192957 (2002-12-01), Chien et al.
patent: 2002/0192966 (2002-12-01), Shanmugasundram et al.
patent: 2003/0013316 (2003-01-01), Kim et al.
patent: 2003/0029567 (2003-02-01), Dhindsa et al.
patent: 2003/0032278 (2003-02-01), Chen et al.
patent: 2003/0044375 (2003-03-01), Nguyen et al.
patent: 2003/0044725 (2003-03-01), Hsue et al.
patent: 2003/0045100 (2003-03-01), Saka et al.
patent: 2003/0057179 (2003-03-01), Luo et al.
patent: 2003/0073319 (2003-04-01), Basol et al.
patent: 2003/0082996 (2003-05-01), Fortin et al.
patent: 2003/0087586 (2003-05-01), Kaushal et al.
patent: 2003/0092260 (2003-05-01), Lui et al.
patent: 2003/0119305 (2003-06-01), Huang et al.
patent: 2003/0159779 (2003-08-01), Sago et al.
patent: 2003/0164354 (2003-09-01), Hsieh et al.
patent: 2003/0166345 (2003-09-01), Chang
patent: 2003/0184732 (2003-10-01), Katz et al.
patent: 2003/0186546 (2003-10-01), Wollstein et al.
patent: 2003/0196989 (2003-10-01), Zhou et al.
patent: 2003/0199112 (2003-10-01), Shanmugasundram et al.
patent: 2003/0203321 (2003-10-01), Ma et al.
patent: 2003/0211746 (2003-11-01), Chen et al.
patent: 2003/0213558 (2003-11-01), Basol et al.
patent: 2003/0224596 (2003-12-01), Marxsen et al.
patent: 2004/0242012 (2004-12-01), Ikeda
patent: 1 041 614 (2000-10-01), None
patent: 1 081 751 (2001-03-01), None
patent: 1 320 128 (2003-06-01), None
patent: 07230993 (1995-08-01), None
patent: 07235543 (1995-09-01), None
patent: 11 067766 (1999-03-01), None
patent: WO 99/46812 (1999-09-01), None
patent: WO 00/03426 (2000-01-01), None
patent: WO 00/59005 (2000-10-01), None
patent: WO 01/88229 (2001-11-01), None
patent: WO 02/37541 (2002-05-01), None
patent: WO 03/026004 (2003-03-01), None
patent: WO 03/058703 (2003-07-01), None
TEGAL Corporation, “Enabling a Wireless World”, p. 1, http://www.tegal.com/.
TEGAL Corporation, “Corporate Information”, pp. 1-7, http://www.tegal.com/corp/corpinfo.html.
TEGAL Corporation, “Products and Services”, p. 1, http://www.tegal.com/prod—srvcs/products—serv.html.
TEGAL Corporation, “Products and Services, 6500 Hre Series”, pp. 1-3, http://www.tegal.com/prod—srvcs/6500—prod.html.
TEGAL Corporation, “Products and Services, 900 Series”, pp. 1-4, http://www.tegal.com/prod—srvcs/900—prod.html.
TEGAL Corporation, “Products and Services, Tegal i90X—The Next Generation in Plasma Etch Technology”, pp. 1-4, http://www.tegal.com/prod—srvcs/i90x—data—sheet.html.
Y. Oshita, N. Howi, “Lower temperature plasma etching of Cu using IR light irradiation”, Thin Solid Films, 1995.
Lynn R. Allen, John M. Grant, “Tungsten plug etchback and substrate damage measured by atomic force microscopy”, J. Vac. Sci Technol. May/Jun 1995 pp 918-922.
William F. Marx, Yunju Ra, Richard Yang, Ching-Hwa Chen, “Plasma and processing effects of electrode spacing for tungsten etchback using a bipolar electrostatic wafer clamp”, J. Vac. Sci Technol. Nov/Dec 1994 pp 3087-3090.
J. Farkas, K.-M. Chi, M.J. Hampden-Smith, T.T. Kodas, “Low-temperature copper etching via reactions with CI2and Pet3under ultrahigh vacuum conditions”, J. Appl. Phys, Feb. 1993, pp 1455-1460.
Seongju Park, T.N. Rhodin, L.C. Rathbun, “Halide formation and etching of Cu thin films with CI2and Br2”, J. Vac. Sci Technol., Mar/Apr 1986, pp 168-172.
Lynn R. Allen, “Tungsten Plug Etchback In A TCP Etcher”, Sharp Microelectronics Technology, Inc., pp 255-263.
N. Hosoi, Y. Ohshita, “Plasma Etching Of Copper Films Using IR Light Irradiation”, Mat. Res. Soc. Symp. Proc. vol. 337, 1994, pp 201-205.
TEGAL Corporation, “Enablilng a Wireless World”, p. 1, http://www.tegal.com/.
TEGAL Corporation, “Corporate Information”, pp. 1-7, http://www.tegal.com/corp/corpinfo.html.
TEGAL Corporation, “Products and Services”, p. 1, http://www.tegal.com/prod—srvcs/products—serv.html.
TEGAL Corporation, “Products and Services, 6500 Hre Series”, pp. 1-3, http://www.tegal.com/prod—srvcs/650013prod.html.
TEGAL Corporation, “Products and Services, 900 Series”, pp. 1-4, http://www.tegal.com/prod—srvcs/900—prod.html.
TEGAL Corporation, “Products and Services, Tegal i90X

Affiliated with

Also associated with

Rating

Small volume process chamber with hot inner surfaces does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Small volume process chamber with hot inner surfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Small volume process chamber with hot inner surfaces will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3603686