Small-sized semiconductor device featuring protection...

Details Small-sized semiconductor device featuring protection... Small-sized semiconductor device featuring protection...

2006-11-17

2009-12-01

Gurley, Lynne A> (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

C257S409000, C257S605000

Reexamination Certificate

active

07626214

ABSTRACT:
In a semiconductor device, a metal oxide semiconductor field effect transistor (MOSFET) is formed in a semiconductor substrate, and an isolation layer is formed on the semiconductor substrate so as to extend along a side of the semiconductor substrate. A first conductive layer is formed on the isolation layer along the side of the semiconductor substrate so as to be electrically connected to a gate of the MOSFET. A second conductive layer is formed on the isolation layer along the side of the semiconductor substrate so as to be electrically connected to a drain of the MOSFET. A protection circuit is made of at least two diodes which are defined between the first conductive layer and the second conductive layer.

REFERENCES:
patent: 5736779 (1998-04-01), Kobayashi
patent: 5985708 (1999-11-01), Nakagawa et al.
patent: 6940131 (2005-09-01), Baldwin et al.
patent: 2002/0195657 (2002-12-01), Williams et al.
patent: 2005/0156207 (2005-07-01), Yazawa et al.

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