Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-07-27
2008-11-18
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S004000, C257S005000, C257SE45002
Reexamination Certificate
active
07453082
ABSTRACT:
A memory cell and a method of fabricating the memory cell having a small active area are provided. By forming a spacer in a window that is sized at the photolithographic limit, in one embodiment, a pore may be formed in dielectric layer which is smaller than the photolithographic limit. Electrode material is deposited into the pore, and a layer of structure changing material, such as chalcogenide, is deposited onto the lower electrode, thus creating a memory element having an extremely small and reproducible active area.
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Reinberg Alan R.
Zahorik, legal representative Renee
Fletcher Yoder
Micro)n Technology, Inc.
Tran Thien F
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