Small electrode for a chalcogenide switching device and...

Details Small electrode for a chalcogenide switching device and... Small electrode for a chalcogenide switching device and...

2006-09-05

2006-09-05

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000

Reexamination Certificate

active

07102151

ABSTRACT:
A memory cell and a method of fabricating the memory cell having a small active area. By forming a spacer in a window that is sized at the photolithographic limit, a pore may be formed in dielectric layer which is smaller than the photolithographic limit. Electrode material is deposited into the pore, and a layer of structure changing material, such as chalcogenide, is deposited onto the lower electrode, thus creating a memory element having an extremely small and reproducible active area.

REFERENCES:
patent: 4616404 (1986-10-01), Wang et al.
patent: 5414271 (1995-05-01), Ovshinsky et al.

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