Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-06-05
2007-06-05
Tsai, H. Jey (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S004000, C257S295000, C257SE31029, C438S003000, C438S666000, C438S947000
Reexamination Certificate
active
10313991
ABSTRACT:
A contact structure, including a first conducting region having a first thin portion with a first sublithographic dimension in a first direction; a second conducting region having a second thin portion with a second sublithographic dimension in a second direction transverse to said first direction; the first and second thin portions being in direct electrical contact and defining a contact area having a sublithographic extension. The thin portions are obtained using deposition instead of lithography: the first thin portion is deposed on a wall of an opening in a first dielectric layer; the second thin portion is obtained by deposing a sacrificial region on vertical wall of a first delimitation layer, deposing a second delimitation layer on the free side of the sacrificial region, removing the sacrificial region to form a sublithographic opening that is used to etch a mold opening in a mold layer and filling the mold opening.
REFERENCES:
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5814527 (1998-09-01), Wolstenholme et al.
patent: 5952671 (1999-09-01), Reinberg et al.
patent: 5970336 (1999-10-01), Wolstenholme et al.
patent: 6031287 (2000-02-01), Harshfield
patent: 6238946 (2001-05-01), Ziegler
patent: 6313604 (2001-11-01), Chen
patent: 6316784 (2001-11-01), Zahorik et al.
patent: 6440837 (2002-08-01), Harshfield
patent: 6512241 (2003-01-01), Lai
patent: 6541333 (2003-04-01), Shukuri et al.
patent: 6545287 (2003-04-01), Chiang
patent: 6613604 (2003-09-01), Maimon et al.
patent: 6617192 (2003-09-01), Lowrey et al.
patent: 6750079 (2004-06-01), Lowrey et al.
patent: 6943365 (2005-09-01), Lowrey
patent: 6969866 (2005-11-01), Lowrey et al.
patent: 2001/0002046 (2001-05-01), Reinberg et al.
patent: 2002/0017701 (2002-02-01), Klersy et al.
patent: 2002/0036931 (2002-03-01), Lowrey et al.
patent: 2002/0060334 (2002-05-01), Shukuri et al.
patent: 2002/0070401 (2002-06-01), Takeuchi et al.
patent: 2003/0047762 (2003-03-01), Lowrey
patent: 2003/0075778 (2003-04-01), Klersy
patent: 2003/0219924 (2003-11-01), Bez et al.
patent: 2003/0231530 (2003-12-01), Bez et al.
patent: 2004/0011381 (2004-01-01), Klebanoff et al.
patent: 2004/0012009 (2004-01-01), Casagrande et al.
patent: 2004/0166604 (2004-08-01), Ha et al.
patent: 2004/0245603 (2004-12-01), Lowrey et al.
patent: WO 00/57498 (2000-09-01), None
patent: WO 02/09206 (2002-01-01), None
Palun, L. et al., “Fabrication of Single Electron Devices by Hybrid (E-Beam/DUV) Lithography,”Microelectronic Engineering 53, pp. 167-170, 2000.
U.S. Appl. No. 09/276,273, filed Mar. 25, 1999, Klersy.
Bez Roberto
Pellizzer Fabio
Riva Caterina
Zonca Romina
Iannucci Robert
Jorgenson Lisa K.
Ovonyx Inc.
Seed IP Law Group PLLC
STMicroelectronics S.r.l.
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