Slurry with chelating agent for chemical-mechanical polishing of

Details Slurry with chelating agent for chemical-mechanical polishing of Slurry with chelating agent for chemical-mechanical polishing of

1997-08-21

2000-08-08

Koslow, C. Melissa

Abrasive tool making process, material, or composition

With inorganic material

51308, 51309, 106 3, 438692, 438693, B08B 700

Patent

active

060996048

ABSTRACT:
A slurry composition enhances the removal of polish-resistant surface moieties from the surface of a semiconductor wafer during chemical-mechanical polishing. The slurry composition is a mixture including a solvent, a plurality of abrasive particles, and a chelating agent. The abrasive particles abrade the surface of the wafer to remove surface moieties and underlying material. The chelating agent is selected to react with polish-resistant surface moieties on the surface of the wafer surface, to thereby render the surface moieties easier to remove from the surface layer with substantially non-aggressive chemical-mechanical polishing techniques. In operation, the surface moieties and the underlying bulk material are removed by a combination of the chemical effects of the chelating agent and the mechanical effects of the abrasive particles.

REFERENCES:
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patent: 5300155 (1994-04-01), Sandhu et al.
patent: 5318927 (1994-06-01), Sandhu et al.
patent: 5354490 (1994-10-01), Yu et al.
patent: 5366542 (1994-11-01), Yamada et al.
patent: 5735963 (1998-04-01), Obeng

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