Slurry formulation for selective CMP of organic...

Details Slurry formulation for selective CMP of organic... Slurry formulation for selective CMP of organic...

1999-01-29

2001-01-16

Powell, William (Department: 1765)

Compositions

Etching or brightening compositions

Inorganic acid containing

C216S089000, C438S693000

Reexamination Certificate

active

06174454

ABSTRACT:

FIELD OF THE INVENTION
This invention relates to the field of semiconductor process and, more specifically to slurry formulation for selective CMP of organic spin-on-glass insulating layer with low dielectric constant.
BACKGROUND OF THE INVENTION
Due to the shrinking size and the fast increasing density of the components in semiconductor devices, conduction within a single layer can't fulfil the demands in the nano semiconductor process anymore. Multi-layer conduction is therefore developed. With increasing resolution, the depth of focus in patterning process is reduced, so advanced planarization technique is required. Currently, chemical mechanical planarization (CMP) is the key technique for global planarization.
On the other hand, low dielectric insulating layer is widely used to improve the conduction between components. The RC delay time can be reduced, for example, by adding organic compounds to the traditional insulating layers such as: silica, boron phosphosilicate glass, phosphosilicate glass, borosilicate glass, and florine-added silica.
Traditional silica-based slurry for CMP has low polish rate and is easy to cause scratches on the wafers. Yoshio H., Taeshi F. etc. at Hitachi chemistry use cerium oxide-based slurry instead. The polish rate cerium-based slurry on SOG and thermal oxide is at least five times higher than commercial silica-based slurry CABOT SC-1. They also found that adding organic compounds to silica can not only result in low dielectric constant but also reduce the polish rate of CMP.
So far, no adequate slurry for CMP of organic SOG insulating layer, which can provide satisfying polish rate, is available.
SUMMARY OF THE INVENTION
In accordance with the present invention, slurry formulation for CMP of low dielectric insulating layer. Particularly for organic compound added SOG insulating layer, the polish rate and the polish selectively is enhanced.
When the interconnection between components in the device is completed, a silica layer of 1000 is usually formed. Silica with higher purity and organic compounds is then spinned-on to serve as a layer with low dielectric constant. The polish rate of the slurry in the present invention is much higher when the slurry is applied on organic SOG than thermal oxide. This feature can lead to larger tolerance in end point determination during the planarization process. So the polish time can be controlled more easily. High uniformity and yield is guaranteed.
Other important technical advantages are readily apparent to one skilled in the art from the following figures, descriptions, and claims.


REFERENCES:
patent: 5855811 (1999-01-01), Grieger et al.

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