Slurry containing manganese oxide and a fabrication process of a

Details Slurry containing manganese oxide and a fabrication process of a Slurry containing manganese oxide and a fabrication process of a

1997-06-27

2000-12-12

Mills, Gregory

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438751, 438697, 134 13, 216 89, H01L 21302

Patent

active

061598585

ABSTRACT:
A slurry contains MnO.sub.2 or other manganese oxide as a primary component of abrasive particles. Further, a polishing process using such a manganese oxide abrasive and a fabrication process of a semiconductor device using such a polishing process are disclosed.

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