Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1998-01-27
1999-03-02
Jones, Deborah
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
51306, 51307, 51309, 252 791, 106 11, H01L 21463
Patent
active
058770895
ABSTRACT:
A slurry contains MnO.sub.2 or other manganese oxide as a primary component of abrasive particles. Further, a polishing process using such a manganese oxide abrasive and a fabrication process of a semiconductor device using such a polishing process are disclosed.
REFERENCES:
patent: 5228886 (1993-07-01), Zipperian
patent: 5244534 (1993-09-01), Yu et al.
patent: 5308438 (1994-05-01), Cote et al.
patent: 5312512 (1994-05-01), Allman et al.
patent: 5395801 (1995-03-01), Doan et al.
patent: 5445996 (1995-08-01), Kodera et al.
patent: 5498565 (1996-03-01), Gocho et al.
patent: 5593919 (1997-01-01), Lee et al.
patent: 5763325 (1998-06-01), Kishii et al.
Arimoto Yoshihiro
Hatada Akiyoshi
Horie Hiroshi
Kishii Sadahiro
Nakamura Ko
Fujitsu Limited
Jones Deborah
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