Slurry containing manganese oxide

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

51306, 51307, 51309, 252 791, 106 11, H01L 21463

Patent

active

058770895

ABSTRACT:
A slurry contains MnO.sub.2 or other manganese oxide as a primary component of abrasive particles. Further, a polishing process using such a manganese oxide abrasive and a fabrication process of a semiconductor device using such a polishing process are disclosed.

REFERENCES:
patent: 5228886 (1993-07-01), Zipperian
patent: 5244534 (1993-09-01), Yu et al.
patent: 5308438 (1994-05-01), Cote et al.
patent: 5312512 (1994-05-01), Allman et al.
patent: 5395801 (1995-03-01), Doan et al.
patent: 5445996 (1995-08-01), Kodera et al.
patent: 5498565 (1996-03-01), Gocho et al.
patent: 5593919 (1997-01-01), Lee et al.
patent: 5763325 (1998-06-01), Kishii et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Slurry containing manganese oxide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Slurry containing manganese oxide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Slurry containing manganese oxide will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-422549

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.