Slurry compositions and method for the chemical-mechanical polis

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

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216 89, 252 794, 252 791, 438754, 438745, H01L 2100

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06083840&

ABSTRACT:
The present invention relates to an improved chemical-mechanical polishing (CMP) method for polishing a copper coated wafer containing a copper adhesion-promoting layer and a silicon-based layer. The method polishes copper layers with high removal rates, low defect densities and reduced amounts of dishing and erosion. The method involves a two step process. The first step is to utilize a bulk copper removal slurry that rapidly removes the majority the copper on the substrate. The second step utilizes a 1:1:1 selectivity copper/tantalum/silicon dioxide (Cu/Ta/SiO.sub.2) slurry that has approximately the same polishing rates for the copper layer, the adhesion-promoting layer and the silicon-based substrate. The second slurry reduces the amount of dishing and erosion that occurs in the copper trenches and dense copper arrays.

REFERENCES:
patent: Re35570 (1997-07-01), Rowenhorst et al.
patent: 3951710 (1976-04-01), Basi
patent: 4332649 (1982-06-01), Salzle
patent: 4549374 (1985-10-01), Basi et al.
patent: 4954142 (1990-09-01), Carr et al.
patent: 4959113 (1990-09-01), Roberts
patent: 4968381 (1990-11-01), Prigge et al.
patent: 4992135 (1991-02-01), Doan
patent: 5084071 (1992-01-01), Nenadic
patent: 5157876 (1992-10-01), Medellin
patent: 5209816 (1993-05-01), Yu et al.
patent: 5225034 (1993-07-01), Yu et al.
patent: 5366523 (1994-11-01), Rowenhorst et al.
patent: 5391258 (1995-02-01), Brancaleoni et al.
patent: 5476606 (1995-12-01), Brancaleoni et al.
patent: 5858813 (1999-01-01), Scherber et al.
patent: 5897375 (1999-04-01), Watts et al.
"Chemical-Mechanical Polishing of Copper With Oxide And Polymer Interlevel Dielectrics" Ronald J. Gutmann,et al Thin Solid Films 270 (1995) pp. 596-600.
"Initial Study On Copper CMP Slurry Chemistries" R. Carpio, et al Thin Solid Films 266 (1995) pp. 238-244.
"Characterization of Cu Chemical Mechanical Polishing By Electrochemical Investigations" D. Zeidler, et al Microelectric Engineering 33 (1997) pp. 259-268.
"Stabilization Of Alumina Slurry For Chemical-Mechanical Polishing Of Copper" Q. Luo, et al Langmuir 12 (1996) pp. 3563-3566.
"Mechanism Of Copper Removal During Chemical Mechanical Poliching In Alkaline Media" Q. Luo, et al. VMIC Conference Jun. 10-12, 1997 ISMIC-107/97/0287 (c) pp. 287-292.
"Key Process And Slurry Factors For W CMP For Deep Submicron Device Fabrication" Gautam Grover, et al VMIC Conference Jun. 10-12, 1997 ISMIC-107/97/0293 (c) pp. 293-298.
"Mechanistic Studies Of Al CMP And Development Of Novel Slurries" Ashwani K. Rawat, et al VMIC Conference Jun. 10-12, 1997 ISMIC-107/97/0321 (C) p. 321.
"Modeling And Process Optimization For Selective CMP" Eric Tseng Eric Tseng, et al VMIC Conference Jun. 10-12, 1997 ISMIC-107/97/03601 (C) pp. 360-362.
"Chemical-Mechanical Polishing Of Copper For Intercinnect Formation" Z. Stavreva, et al Microelectronic Engineering 33 (1997) pp. 249-257.
"Chemical-Mechanical Polishing Of Copper Thin Films" By Joseph M. Steigerwald A Thesis Submitted to the Graduate Faculty of Rensselaer Polytechnic Institute.
"Chemical-Mechanical Polishing Of Copper In Glycerol Based Slurries" K.S. Kumar, et al. Material Research Society Symposium Proceedings 1996.

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