Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-09-18
2007-09-18
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S585000, C438S692000, C257SE21244
Reexamination Certificate
active
11168412
ABSTRACT:
A slurry composition includes about 4.25 to about 18.5 weight percent of an abrasive, about 80 to about 95 weight percent of deionized water, and about 0.05 to about 1.5 weight percent of an additive. The slurry composition may further include a surfactant. In a polishing method using the slurry composition, a polysilicon layer may be rapidly polished, and also dishing and erosion of the polysilicon layer may be suppressed.
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Kim Kyung-Hyun
Ko Yong-Sun
Lee Hyo-Jin
Ghyka Alexander
Lee & Morse P.C.
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