Slurry and use thereof for polishing

Details Slurry and use thereof for polishing Slurry and use thereof for polishing

2006-05-30

2006-05-30

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Nongaseous phase etching of substrate

Using film of etchant between a stationary surface and a...

C216S089000, C438S693000, C252S079100, C252S079400

Reexamination Certificate

active

07052625

ABSTRACT:
A slurry containing abrasive particles, an oxidizing agent having a low static etch rate on at least one acid or salt metal, and having a pH of about 5 to about 11 is especially useful for polishing surfaces, including both metal and silicon dioxide, such as present in microelectronics, at the same or substantially the same polishing rates.

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patent: 5770103 (1998-06-01), Wang et al.
patent: 5804513 (1998-09-01), Sakatani et al.
patent: 5968280 (1999-10-01), Ronay
patent: 6083840 (2000-07-01), Mravic et al.
patent: 2002/0111024 (2002-08-01), Small et al.
patent: 95/24054 (1995-09-01), None

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