Etching a substrate: processes – Planarizing a nonplanar surface
Patent
1997-02-07
1999-09-21
Le, Hoa Van
Etching a substrate: processes
Planarizing a nonplanar surface
216 52, 438691, 438692, 438693, H01L 21304
Patent
active
059549750
ABSTRACT:
Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH.ltoreq.8. The third slurry can be used to polish titanium films.
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Cadien Kenneth C.
Feller Daniel A.
Intel Corporation
Le Hoa Van
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