Abrasive tool making process – material – or composition – With inorganic material – Clay – silica – or silicate
Patent
1994-05-13
1996-05-14
Jones, Deborah
Abrasive tool making process, material, or composition
With inorganic material
Clay, silica, or silicate
106 3, 252 794, 216 89, 216108, 216109, C23F 144, B44C 122
Patent
active
055163467
ABSTRACT:
Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH.ltoreq.8. The third slurry can be used to polish titanium films.
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Kaufman, et al., "Chemical-Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects", J. Electrochem. Soc., vol. 138, No. 11, Nov., 1991.
Cadien Kenneth C.
Feller Daniel A.
Intel Corporation
Jones Deborah
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