Slurries for chemical mechanical polishing

Details Slurries for chemical mechanical polishing Slurries for chemical mechanical polishing

1996-03-28

1998-11-17

Rose, Robert A.

Abrading

Abrading process

Glass or stone abrading

451 36, 1566381, 1566451, B24B 3704

Patent

active

058368060

ABSTRACT:
Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH.ltoreq.8. The third slurry can be used to polish titanium films.

REFERENCES:
patent: 4725375 (1988-02-01), Fujii et al.
patent: 5084071 (1992-01-01), Nenadic et al.
patent: 5137544 (1992-08-01), Medellin
patent: 5209816 (1993-05-01), Yu et al.
patent: 5228886 (1993-07-01), Zipperian
patent: 5340370 (1994-08-01), Cadien et al.
patent: 5516346 (1996-05-01), Cadien et al.

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