Slurries for chemical mechanical polishing

Details Slurries for chemical mechanical polishing Slurries for chemical mechanical polishing

1993-11-03

1994-08-23

Bell, Mark L.

Abrasive tool making process, material, or composition

With inorganic material

Clay, silica, or silicate

106 3, 156636, 252 791, 252 794, 2521861, C23F 144, B44C 122

Patent

active

053403703

ABSTRACT:
Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH.ltoreq.8. The third slurry can be used to polish titanium films.

REFERENCES:
patent: 4725375 (1988-02-01), Fujii et al.
patent: 5084071 (1992-01-01), Nenadic et al.
patent: 5137544 (1992-08-01), Medellin
patent: 5209816 (1993-05-01), Yu et al.
patent: 5228886 (1993-07-01), Zipperian
Kaufman, et al., "Chemical-Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects", J. Electrochem. Soc., vol. 138, No. 11., Nov., 1991.

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