Measuring and testing – Volume or rate of flow – Thermal type
Patent
1986-10-20
1989-05-02
Goldstein, Herbert
Measuring and testing
Volume or rate of flow
Thermal type
338 25, 357 55, G01F 168
Patent
active
048256935
ABSTRACT:
An integrated semiconductor device includes a semiconductor body with a first surface having a predetermined orientation with respect to a crystalline structure in the semiconductor body. The semiconductor body has a depression formed into the first surface of the body. A layer of thin film material covers at least a portion of the first surface and includes an electric, thermal-to-electric, or electric-to-thermal element. The diaphragm apparatus forms a slotted diaphragm substantially covering the depression. The slotted diaphragm includes one or more slots sized and oriented so that, in the fabrication of the device, an anisotropic etch placed on the slot or slots will completely undercut the diaphragm and form the depression. The electric, thermal-to-electric, or electric-to-thermal element is substantially supported by the diaphragm and, therefore, is substantially thermally and physically isolated from the semiconductor body.
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Bohrer Philip J.
Johnson Robert G.
Goldstein Herbert
Honeywell Inc.
Mersereau C. G.
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