Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1993-05-14
1995-04-25
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118715, 118724, 118725, C23C 1600
Patent
active
054095395
ABSTRACT:
There is a slotted cantilever diffusion tube system with a temperature insulating baffle system and a distributed gas injector system. Uniquely, there is an enhanced system that decreases the defects of wafers due to temperature, pressure, and concentration fluctuations in a low pressure chemical vapor deposition (LPCVD) process for fabricating IC wafers. Specifically, there is a cantilevered diffusion quartz tube system (12, 14) that has at least one temperature and pressure barrier baffle (28) placed between the lower temperature end (27) of the tube and the wafers under process (18). Additionally, there are at least two deposition gas injection exhaust ports (30, 32, 34) distributed along the length of the quartz tube near the wafers to assure that there is a relatively uniform concentration of diffusion gas in the heating chamber (17). Moreover, the tube has a pressure sensor (20) having its gauges on the outside of the tube and having the sensor extending into and through the baffle section and into the wafer heating chamber. Uniquely, the quartz tube (12) has gas couplings (40), located between flange ring's ( 22) and an oven's (14) abutting surfaces (36, 38), designed to allow for sealable and flexible attachment between the two surfaces.
REFERENCES:
patent: 4459104 (1984-07-01), Wollmann
patent: 4526534 (1985-07-01), Wollmann
patent: 4543059 (1985-09-01), Whang et al.
patent: 4756272 (1988-07-01), Kessler
patent: 4760244 (1988-07-01), Hokynar
patent: 4767251 (1988-08-01), Whang
patent: 4854266 (1989-08-01), Simson
patent: 4911638 (1990-03-01), Bayne
patent: 4992044 (1991-02-01), Philipossian
patent: 5020476 (1991-06-01), Bay
patent: 5029554 (1991-07-01), Miyashita
patent: 5118286 (1992-06-01), Sarin
patent: 5192589 (1993-03-01), Sandhu
patent: 5320680 (1994-06-01), Learn
An Interactive Computer Simulation of Heating and Cooling a Row of Silicon Wafers, "Journal of the Electrochemical Society" vol. 135, No. 5, May 1988.
Consideration of Process Gas Purity During CMOS Gate Oxidation, "Proceedings Institute of Environmental Sciences" Griswold et al 1991 (pp. 719-722).
The Effect of Ambient Air Infiltration on Growth Rate and Electrical Characteristics of Ultra-Thin Silicon Dioxide Gate Insulators, (pp. 357-367) Philipossian et al.
Malinowski Darrin C.
Turner Charles L.
Bueker Richard
Micro)n Technology, Inc.
LandOfFree
Slotted cantilever diffusion tube system with a temperature insu does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Slotted cantilever diffusion tube system with a temperature insu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Slotted cantilever diffusion tube system with a temperature insu will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1565171