Siting a film onto a substrate including electron-beam evaporati

Details Siting a film onto a substrate including electron-beam evaporati Siting a film onto a substrate including electron-beam evaporati

1983-09-22

1987-10-06

Morgenstern, Norman

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

4272481, 427250, 4272552, B05D 306

Patent

active

046982353

ABSTRACT:
A single-crystal ingot I of boron-doped silicon is electron-beam heated in ionized hydrogen. Using an electrode E to apply an electric field from the ingot I towards a heated substrate S, which is r.f. biassed, an amorphous boron-doped silicon film deposits on the substrate S.
Intrinsic and n-type material can also be produced.

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High Rate Evaporation/Deposition Processes of Metals, Alloys and Ceramics for Vacuum Metallurgical Applications, R. F. Bunshah, pp. 814-819.

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