SIPOS Deposition method

Coating processes – Electrical product produced – Condenser or capacitor

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427 86, 427 95, 427255, 4272553, B05D 512

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044891032

ABSTRACT:
A plurality of wafers is serially disposed between a reactant gas inlet portion and an exhaust gas outlet portion of a deposition chamber. The reactant gas comprises a predetermined mixture of N.sub.2 O and SiH.sub.4, and a positive, monotonically decreasing temperature gradient is provided between the wafer closest to the inlet portion to the wafer closest to the outlet portion, such that the thickness and resistivity of the deposited SIPOS (semi-insulating polycrystalline silicon) are substantially similar on each wafer.

REFERENCES:
patent: 3900597 (1975-08-01), Chruma et al.
patent: 4014037 (1977-03-01), Matsushita et al.
patent: 4239811 (1980-12-01), Kenlage
patent: 4339471 (1982-07-01), Kaganowicz et al.
patent: 4371587 (1983-02-01), Peters
patent: 4388342 (1983-06-01), Suzuki et al.
"Crystallographic Study of Semi-Insulating Polycrystalline _Silicon (SIPOS) Doped With Oxygen Atoms", M. Hamasaki et al., Journal of Applied Physics 49(7), Jul. 1978, pp. 3987-3992.
"Electronic Properties of Semi-Insulating Polycrystalline-Silicon (SIPOS) Doped With Oxygen Atoms", M. Hamasaki et al., Solid State Communications, vol. 21, pp. 591-593, 1977.
"An Analysis of LPCVD System Parameters for Polysilicon, Silicon Nitride and Silicon Dioxide Deposition", William A. Brown et al., Solid State Technology, Jul. 1979, pp. 51-58.
"Low Pressure CVD Production Processes for Poly, Nitride, and Oxide", Richard S. Rosler, Solid State Technology, Apr. 1977, pp. 63-70.

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