Sintering of silicon nitride to high density

Details Sintering of silicon nitride to high density Sintering of silicon nitride to high density

1981-09-14

1983-04-05

Parrish, John A.

Plastic and nonmetallic article shaping or treating: processes

Including step of generating heat by friction

264 66, 264325, 501154, C04B 3558

Patent

active

043791107

ABSTRACT:
A silicon nitride compact with a density of 95% to 100% is produced by forming a particulate dispersion of silicon nitride and beryllium additive into a compact, firstly sintering the compact from about 1900.degree. C. to about 2200.degree. C. in nitrogen at superatmospheric pressure sufficient to prevent thermal decomposition of the silicon nitride until the entire outside surface of the compact becomes impermeable to nitrogen gas, and then secondly sintering the compact from about 1800.degree. C. to about 2200.degree. C. under a nitrogen pressure having a value at least twice the first nitrogen sintering pressure.

REFERENCES:
patent: 4119689 (1978-10-01), Prochazka
Hardtl, "Gas Isostatic Hot Pressing without Molds", Ceramic Bulletin, vol. 54, No. 2, (1975), pp. 201-205, 207.

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