Sintered silicon carbide porous body impregnated with metallic s

Details Sintered silicon carbide porous body impregnated with metallic s Sintered silicon carbide porous body impregnated with metallic s

1986-03-10

1987-12-01

Van Balen, William J.

Stock material or miscellaneous articles

Self-sustaining carbon mass or layer with impregnant or...

118725, 428698, B32B 900

Patent

active

047104287

ABSTRACT:
A susceptor for use in an in-line or continuous deposition of a film on a silicon wafer by a CVD process, which comprises Si-SiC ceramic containing 7% to 25% by weight of metallic silicon having a high purity. The susceptor has enhanced mechanical strength and dimensional stability and can normally be used repeatedly a large number of times. Further, by using such a susceptor a uniform film can be deposited on the silicon wafer by the CVD process, and a silicon wafer can be coated with a film having desired electrical properties by the CVD process without contaminating the silicon wafer.

REFERENCES:
patent: 4503807 (1985-03-01), Nakayama et al.
patent: 4536449 (1985-08-01), Kennedy et al.

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