Sintered silicon carbide composite

Details Sintered silicon carbide composite Sintered silicon carbide composite

1989-09-25

1992-01-21

Bell, Mark L.

Compositions

Electrically conductive or emissive compositions

Carbide containing

252504, 501 89, 501 91, 501 92, 501 93, C04B 3556, C04B 3558, C04B 3512

Patent

active

050825976

ABSTRACT:
Disclosed herein is a sintered silicon carbide composite prepared by sintering a blend comprising from 25 to 85% by weight of silicon carbide, from 1 to 25% by weight of at least one of chromium and chromium compound, from 10 to 70% by weight of at least one of carbide, nitride and boride of elements belonging to the groups IVb and Vb of the periodical table, and from 3 to 25% by weight of aluminum oxide, in an inert gas atmosphere at a temperature from 1700.degree. to 2100.degree. C.

REFERENCES:
patent: 2406275 (1946-08-01), Wejnarth
patent: 4379852 (1983-04-01), Watanabe et al.

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