Sintered polycrystalline gallium nitride and its production

Details Sintered polycrystalline gallium nitride and its production Sintered polycrystalline gallium nitride and its production

2005-03-01

2005-03-01

Langel, Wayne A. (Department: 1754)

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Structurally defined web or sheet

Physical dimension specified

C264S604000, C423S409000

Reexamination Certificate

active

06861130

ABSTRACT:
Polycrystalline gallium nitride (GaN) characterized by having the atomic fraction of gallium ranging from between about 49% to 55%, an apparent density of between about 5.5 and 6.1 g/cm3, and a Vickers hardness of above about 1 GPa. Polycrystalline GaN can be made by hot isostatic pressing (HIPing) at a temperature ranging from about 1150° C. to 1300° C. and a pressure ranging from between about 1 and 10 Kbar. Alternatively, polycrystalline GaN can be made by high pressure/high temperature (HP/HT) sintering at a temperature ranging from about 1200° to 1800° C. and a pressure ranging from about 5 to 80 Kbar.

REFERENCES:
patent: 3829556 (1974-08-01), Logan et al
patent: 4146379 (1979-03-01), Copley et al.
patent: 6096282 (2000-08-01), Kaner et al.
patent: 6113985 (2000-09-01), Suscavage et al.
patent: 6120748 (2000-09-01), Kaner et al.
patent: 6177057 (2001-01-01), Purdy
patent: 6270569 (2001-08-01), Shibata et al.
R. Dwilinski et al, “GaN Synthesis by Ammo-nothermal Method,” Acta Physica Polonica, A, 88 (5), 833-6 (English), 1995 v(Abstract only), no month.

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