Sintered ITO and an ITO sputtering target

Details Sintered ITO and an ITO sputtering target Sintered ITO and an ITO sputtering target

1997-10-02

2000-09-19

Bell, Mark L.

Compositions: ceramic

Ceramic compositions

Refractory

501134, 20419226, 20419229, 20429813, C04B 35453, C23C 1408, C23C 1434

Patent

active

061211788

ABSTRACT:
Sintered ITO having a relative density of at least 88% and an oxygen content of 15.5-17.0 wt %, as well as an ITO sputtering target made of this sintered ITO. Using the target, an optimal range for the proportion of oxygen in a mixture of argon and oxygen gases used as a sputtering atmosphere is sufficiently expanded to permit the consistent formation of ITO films.

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Bates et al, "Electrical Conductivity, Seebeck Coefficient, and Structure of In.sub.2 O.sub.3 -SnO.sub.2 ", Am. Ceram. Soc. Bull. 65(4), pp. 673-678, (1986) (No Month).

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