Sintered aluminum nitride semi-conductor device

Details Sintered aluminum nitride semi-conductor device Sintered aluminum nitride semi-conductor device

1985-08-26

1986-04-29

Dixon, Jr., William R.

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428627, 428641, 428698, 501 96, 264 61, 174 16HS, H01L 2912, B32B 1504

Patent

active

045857067

ABSTRACT:
A semi-conductor device comprising sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound.

REFERENCES:
patent: 4364100 (1982-12-01), Edmonds et al.

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