Sintered aluminum nitride and semi-conductor device using the sa

Details Sintered aluminum nitride and semi-conductor device using the sa Sintered aluminum nitride and semi-conductor device using the sa

1982-04-29

1985-09-10

Dixon, Jr., William R.

Compositions: ceramic

Ceramic compositions

Refractory

501 98, 501 97, 501153, C04B 3558

Patent

active

045406731

ABSTRACT:
Sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound, and a semi-conductor device using the same.

REFERENCES:
patent: 3930875 (1976-01-01), Ochiai et al.

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