Single wavelength semiconductor laser

Details Single wavelength semiconductor laser Single wavelength semiconductor laser

1988-07-07

1989-07-11

Davie, James W.

Coherent light generators

Particular resonant cavity

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372 32, H01S 319

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active

048478571

ABSTRACT:
In a single wavelength oscillation semiconductor laser having a diffraction grating at the active region, the coupling coefficient between the light and the diffraction grating is low within the laser and high in the neighborhood of the resonator end surface. The amplitude of the diffraction grating is low within the laser and high in the neighborhood of the resonator end surface, or the active layer or the guide layer is thick within the laser and thin in the neighborhood of the resonator end surface. Thus, the laser oscillates at a single wavelength even at high power output operation.

REFERENCES:
patent: 4665528 (1987-05-01), Chinone et al.
Yamaguchi et al., "Phase Shifted DFB-DC-PBH LD in 1.55 Micrometer Wavelength Range", Japanese Electronics Information and Communication Association, No. OQE-150, pp. 33-38.
Soda et al., "Stability in Single Longitudinal Mode Operation in GaInAsP/Inp Phase Adjusted DFB LDs", Tenth IEEE International Semiconductor Laser Conference, E-2, pp. 60-61, Oct. 1986.

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