Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2004-04-28
2010-10-19
Hendrickson, Stuart (Department: 1793)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C423S447100, C977S932000
Reexamination Certificate
active
07816709
ABSTRACT:
Composites of single-walled carbon nanotubes (SWNTs) and a ceramic support (e.g., silica) comprising a small amount of catalytic metal, e.g., cobalt and molybdenum, are described. The particle comprising the metal and ceramic support is used as the catalyst for the production of the single-walled carbon nanotubes. The nanotube-ceramic composite thus produced can be used “as prepared” without further purification providing significant cost advantages. The nanotube-ceramic composite has also been shown to have improved properties versus those of purified carbon nanotubes in certain applications such as field emission devices. Use of precipitated and fumed silicas has resulted in nanotube-ceramic composites which may synergistically improve the properties of both the ceramic (e.g., silica) and the single-walled carbon nanotubes. Addition of these composites to polymers may improve their properties. These properties include thermal conductivity, thermal stability (tolerance to degradation), electrical conductivity, modification of crystallization kinetics, strength, elasticity modulus, fracture toughness, and other mechanical properties. Other nanotube-ceramic composites may be produced based on Al2O3, MgO and ZrO2, for example, which are suitable for a large variety of applications.
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Balzano Leandro
Resasco Daniel E.
Hendrickson Stuart
McAfee & Taft
The Board of Regents of The University of Oklahoma
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