Single wafer regrowth of silicon

Details Single wafer regrowth of silicon Single wafer regrowth of silicon

1992-03-10

1993-01-12

Chaudhuri, Olik

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

1566207, 15662071, 15662072, 156DIG64, 156DIG98, 156DIG102, 422251, 422253, B01D 900

Patent

active

051788403

ABSTRACT:
A wafer chuck is used to support a circular silicon wafer, which was formed from a single wafer casting process, in order to perform monocrystalline silicon regrowth. The cast wafer, having a monocrystalline silicon seed, located at its center, rests atop raised portions of the chuck and is held in place by vaccum at the center and the perimeter. The rest of the underside of the wafer is physically separated from the chuck surface by pressurized gas. An annular laser beam is then used to melt the silicon from the seed outward to grow the wafer into a monocrystalline form.

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VLSI Technology S. M. Sze, "Crystal Growth and Wafer Preparation," C. W. Pearce, McGraw Hill, 1988.
J. Appl. Phys. 63(8) pp. 2660-2668 "Role of impurities in zone melting recrystallization of the 10 .mu.m thick polycrystalline silicon films", Mertens et al., Apr. 15, 1988.
Appl. Phys. Oct. 1, 1981, pp. 561-563 "Improved techniques for growth of large-area single-crystal Si sheets over SiO.sub.2 using lateral epitaxy by seeded solidification", Tsaur et al.
Zone Melting William G. Pfann; John Wiley and Sons; New York; 1958 and 1966.

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