Single wafer plasma etching system

Details Single wafer plasma etching system Single wafer plasma etching system

1991-12-30

1993-07-20

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 118723, 20429834, 20429831, 20429802, H01L 2100

Patent

active

052289397

ABSTRACT:
The present invention provides an apparatus and a method to improve the single wafer RF plasma etching. A plasma etching apparatus including an etching chamber having a first electrode and a second electrode disposed in the etching chamber with a wafer to be etched disposed on the first electrode. The etching chamber having a chamber reference voltage and the first and the second electrodes being electrically isolated from the etching chamber. The plasma etching system also has an RF generator producing a radio frequency input voltage and a voltage and phase controller electrically connected to the RF generator. The voltage and phase controller is further connected to the first electrode and the second electrode to generate in the first electrode and the second electrode two corresponding voltages substantially equal in magnitude but of opposite signs relative to said chamber reference voltage and further that the first electrode always has a lower voltage than the second electrode such that the ionized particles move to the wafer disposed on the first electrode through the entire RF cycle.

REFERENCES:
patent: 4626312 (1986-12-01), Tracy
patent: 4871421 (1989-10-01), Ogle et al.

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