Single wafer etching method

Details Single wafer etching method Single wafer etching method

2011-03-15

2011-03-15

Deo, Duy-Vu N (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S747000

Reexamination Certificate

active

07906438

ABSTRACT:
An object of the present invention is to provide a single wafer etching apparatus realizing a high flatness of wafers and an increase in productivity thereof. In the single wafer etching apparatus, a single thin disk-like wafer sliced from a silicon single crystal ingot is mounted on a wafer chuck and spun thereon, and an overall front surface of the wafer is etched with an etching solution supplied thereto by centrifugal force generated by spinning the wafer11. The singe wafer etching apparatus includes a plurality of supply nozzles26, 27capable of discharging the etching solution14from discharge openings26a,27aonto the front surface of the wafer11, nozzle-moving devices each capable of independently moving the plurality of supply nozzles28, 29, and an etching solution supplying device30for supplying the etching solution14to each of the plurality of supply nozzles and discharging the etching solution14from each of the discharge openings to the front surface of the wafer11.

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