Single-tube interlaced inductively coupling plasma source

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With radio frequency antenna or inductive coil gas...

Reexamination Certificate

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C118S7230IR, C315S111510

Reexamination Certificate

active

06855225

ABSTRACT:
A plasma source for use in, for example, semiconductor processing contains a radio-frequency generator, an impedance matching network, and a coil that encloses a tube. The coil is bifilar, i.e., the turns of one are interlaced with the turns of a second winding. The matching network supplies only a single coil in the plasma source, unlike conventional arrangements wherein a single matching network supplies multiple coils in the plasma source.

REFERENCES:
patent: 4849675 (1989-07-01), Muller
patent: 6007675 (1999-12-01), Toshima
patent: 6077384 (2000-06-01), Collins et al.
patent: 6224680 (2001-05-01), Toshima
patent: 6527912 (2003-03-01), Chen et al.
patent: 6744213 (2004-06-01), Wilcoxson et al.

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