Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-06-21
2005-06-21
Wilson, Allan R. (Department: 2815)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257S295000
Reexamination Certificate
active
06908772
ABSTRACT:
A single transistor (“1T”) ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric. The memory cell of the present invention comprises a substrate, an overlying ferroelectric layer, which may comprise a film of rare earth manganite, and an interfacial oxide layer intermediate the substrate and the ferroelectric layer. In a preferred embodiment, the ferroelectric material utilized in an implementation of the present invention may be deposited by metallorganic chemical vapor deposition (“MOCVD”) or other techniques and exhibits a low relative dielectric permittivity of around 10 and forms an interfacial layer with a relative dielectric permittivity larger than that of SiO2, which makes it particularly suitable for a 1T cell.
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COVA Technologies, Inc.
Hogan & Hartson LLP
Kubida William J.
Meza Peter J.
Wilson Allan R.
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