Single transistor electrically programmable memory device and me

Details Single transistor electrically programmable memory device and me Single transistor electrically programmable memory device and me

1984-11-21

1987-10-06

Popek, Joseph A.

Static information storage and retrieval

Floating gate

Particular biasing

365104, 357 235, G11C 1134

Patent

active

046987878

ABSTRACT:
An electrically erasable programmable memory device which is programmable in the manner of an EPROM and erasable in the manner of an EEPROM. A dielectric layer between the control gate and the floating gate is provided having a high dielectric constant. A thin, uniform gate dielectric layer is provided which demonstrates minimal trapping. Finally, an asymmetrical source/drain junction is provided wherein the source includes a shallow portion and a deeper portion, which deeper portion defines the overlap between the source and the floating gate. In the preferred embodiment the dielectric between the control gate and the floating gate comprises tantalum pentoxide, the thin dielectric layer comprises oxynitride, and the deep diffusion portion of the source comprises phosphorous.

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patent: 4376947 (1983-03-01), Chiu et al.
M. Van Buskirk et al., "E-PROMs Graduate to 256-K Density with Scaled N-Channel Process", Electronics, Feb. 24, 1983, pp. 2-7 to 2-11.
W. S. Johnson et al., "16-K EE-PROM Relies on Tunneling for Byte-Erasable Program Storage", Electronics, Feb. 28, 1980, pp. 2-10 to 2-14.
William S. Johnson et al., "A 16Kb Electrically Erasable Nonvolatile Memory", 1980 Institute of Electrical and Electronic Engineers, AR-118.
Don Knowlton, "Versatile Algorithm, Equipment Cut EPROM Programming Time", Intel, EDN Mar. 17, 1983, pp. 2-13 to 2-16.
S. Roberts et al., "Selective Studies of Crystalline Reactively Sputtered Ta.sub.2 O.sub.5 Films", 166th Electrochemical Society Meeting, Oct. 1984, pp. 491-492.
S. Seki et al., "P-Channel TFT's Using Magnetron-Sputtered Ta.sub.2 O.sub.5 Films as Gate Insulators", IEEE Electron Device Letters, vol. EDL-5, No. 6, Jun. 1984, pp. 197-198.

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