Single transistor driver circuit

Details Single transistor driver circuit Single transistor driver circuit

1983-06-24

1987-02-10

Millen, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307246, 357 22, H03K 17687, H03K 1756, N01L 2980

Patent

active

046424911

ABSTRACT:
A driver circuit is provided which includes a field effect transistor having first and second spaced apart semiconductor regions of a given conductivity type and a third semiconductor region of a conductivity type opposite to the given conductivity type interposed between the first and second regions and having a given sustaining voltage serially connected with a capacitor. The circuit further includes means for applying between the first and second spaced apart regions a given supply voltage having a magnitude greater than the magnitude of the sustaining voltage and less than the breakdown voltage of a PN junction formed in the transistor and means including a control voltage applied to the gate electrode of the transistor for initiating current flow between the first and second spaced apart regions when the given supply voltage is applied between the first and second spaced apart regions.

REFERENCES:
patent: Re27305 (1972-03-01), Polkinghorn et al.
patent: 3387286 (1968-06-01), Dennard
patent: 3564290 (1971-02-01), Sonoda
patent: 4024561 (1977-05-01), Ghatalia
patent: 4199695 (1980-04-01), Cook et al.
Solid State Electronics, vol. 24, pp. 523-531, 1981 "A Model for the Breakdown Characteristics of p-Channel MOS . . . " by Maes et al.
IBM Journal of Research Development, vol. 24, No. 3, May 1980 "A 65K FET Dynamic Random Access Memory . . . " pp. 318-320 by T. C. Lo et al.

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