Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1986-12-29
1989-10-31
Clawson, Jr., Joseph E.
Static information storage and retrieval
Magnetic bubbles
Guide structure
357 41, 365185, H01L 2978
Patent
active
048781010
ABSTRACT:
A single transistor EEPROM cell utilizes a tunneling oxide erase mechanism in which the tunneling oxide overlies a portion of the channel region. In addition, an array of single transistor EEPROM cells having a layout which provides convenient byte-at-a-time erase and program operation is disclosed. Two bytes of the array along adjacent rows share a common source, which also forms the source of a pair of erase select transistors, one for each byte. The word lines/control gates of the two bytes form the gates of the two erase select transistors.
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Hsieh Ning
Kuo Clinton C.
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