Single-substrate-processing apparatus in semiconductor processin

Details Single-substrate-processing apparatus in semiconductor processin Single-substrate-processing apparatus in semiconductor processin

1998-04-08

1999-12-28

Tentoni, Leo B.

Coating apparatus

Gas or vapor deposition

With treating means

118 50, 118 501, 118725, 118728, C23C 1600

Patent

active

06007633&

ABSTRACT:
The process chamber of a thermal CVD apparatus for a semiconductor wafer W has flooring and ceiling plates made of quartz. Lower and upper heaters are arranged behind the flooring and ceiling plates. The supply for supplying a process gas into the process chamber has a shower head directly under the ceiling plate, an outer tube surrounding the shower head, and radial tubes connecting the outer tube and the shower head. The shower head is made of quartz, and its top bottom and top plates can transmit radiation heat from the upper heater.

REFERENCES:
patent: 5683518 (1997-11-01), Moore et al.
patent: 5781693 (1998-07-01), Ballance et al.

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