Single substrate hydrogen and microwave absorber for...

Details Single substrate hydrogen and microwave absorber for... Single substrate hydrogen and microwave absorber for...

2005-02-08

2005-02-08

Clark, S. V. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With desiccant, getter, or gas filling

C257S728000, C438S471000

Reexamination Certificate

active

06853062

ABSTRACT:
A single substrate hydrogen and microwave absorber (20) attenuates spurious microwave signals in a metal Integrated Microwave Assembly (10, 10′) and reduces hydrogen poisoning of hydrogen sensitive components implemented in the Integrated Microwave Assembly (10, 10′). The single substrate hydrogen and microwave absorber (20) includes a titanium substrate (30) with channels (32) spaced apart from one another by a predetermined distance. A layer of microwave absorbing material (34) is formed on portions (35) of the titanium substrate (30) between the channels (32), and a layer of hydrogen getting material (36) is formed in the channels (32) of the titanium substrate (30).

REFERENCES:
patent: 6369442 (2002-04-01), Saito
patent: 6548889 (2003-04-01), Saito
patent: 6703701 (2004-03-01), Baudet et al.
patent: 20040023058 (2004-02-01), Kovacs et al.
patent: 20040106001 (2004-06-01), Kovacs et al.

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