Single substrate annealing of magnetoresistive structure

Details Single substrate annealing of magnetoresistive structure Single substrate annealing of magnetoresistive structure

2005-07-19

2005-07-19

Sheehan, John P (Department: 1742)

Metal treatment

Process of modifying or maintaining internal physical...

Magnetic materials

C438S003000

Reexamination Certificate

active

06918965

ABSTRACT:
A device for magnetically annealing magnetoresistive elements formed on wafers includes a heated chuck and a delivery mechanism for individually placing the wafers individually on the chuck one at a time. A coil is adjacent to the chuck and generates a magnetic field after the wafer is heated to a Néel temperature of an anti-ferromagnetic layer. A control system regulates the temperature of the heated chuck, the strength of the magnetic field, and a time period during which each chuck is heated to control the annealing process. The annealed elements are incorporated in the fabrication of magnetic memory devices.

REFERENCES:
patent: 5496759 (1996-03-01), Yue et al.
patent: 6027948 (2000-02-01), Jensen et al.
patent: 6048739 (2000-04-01), Hurst et al.

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