Single step lift-off technique for submicron gates

Details Single step lift-off technique for submicron gates Single step lift-off technique for submicron gates

1987-07-17

1988-09-06

Ozaki, George T.

Fishing, trapping, and vermin destroying

437229, 437944, H01C 21441

Patent

active

047693436

ABSTRACT:
A method for forming a submicron width metal line on a substrate is described incorporating the steps of coating a substrate with a layer of photoresist, baking the layer, exposing the layer to a pattern, soaking the layer in a solution including chlorobenzene, developing the layer to form openings, baking the photoresist to remove any residual chlorobenzene, exposing the layer to deep ultraviolet radiation, baking the layer to cause the layer to flow at the edges of the openings, depositing metal on the layer and on the substrate, and dissolving the layer to lift off the metal disposited on the layer whereby the metal deposited on the substrate remains. The invention overcomes the problem of forming submicron width metal lines from one micron openings in a photoresist layer.

REFERENCES:
patent: 4489101 (1984-12-01), Shibata
patent: 4523976 (1985-06-01), Bukhman
patent: 4546534 (1985-10-01), Nicholas
patent: 4659650 (1987-04-01), Moritz et al.
patent: 4661204 (1987-04-01), Mathur et al.
"Single Step Optical Lift-Off Process", IBM J. Res. Develop., vol. 24, No. 4, pp. 452-460, M. Hatzakis et al.-7/80.
"Single-Step Lift-Off Process Using Chlorobenzene Soak on AZ4000 Resists", J. Vac. Sci. Tech., B3(1), pp. 25-27, 1/85, A. Fathimulla, J.F/85.
"High Temp. Flow Resistance of Micron Sized Images in AZ Resists", IBM Research Lab., pp. 2645-2647, 12/81, Hiraoka et al., J. Electrochem. Soc.
"Deep UV Hardening of Positive Photoresist Patterns", Xerox Palo Alto Research Ctr., pp. 1379-1381, 6/82-R. Allen et al., vol. 129, No. 6.

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