Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1990-02-26
1991-09-03
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330293, 330311, H03F 134
Patent
active
050458086
ABSTRACT:
A high-gain solid-state amplifier (20) includes an amplification stage including a transistor (Q.sub.1) having a current-dependent transconductance value. The transistor is operatively connected to a load resistor (R.sub.L1) through which a load current (I.sub.1) flows. The value of the load resistor together with the transconductance value affects the voltage gain of the amplifier. A resistor (R.sub.2) provides a supplemental bias current (I.sub.2) to a current summing node (A). The current summing node sums the load current and the supplemental bias current and provides the transistor with a total current (I.sub.d) that affects the transconductance value. The value of the supplemental bias current is chosen to supplement the load current to provide a predetermined total current so that the voltage gain may be adjusted by adjusting the load resistor without changing the transconductance value. Alternatively, the amplifier voltage gain may be enhanced by increasing the supplemental bias current and transistor size in a known manner while maintaining a fixed value of the load resistor.
REFERENCES:
patent: 4881044 (1989-11-01), Kinoshita et al.
Osafune et al., "A Low-Noise GaAs Monolithic Broadband Amplifier Using a Drain Current Saving Technique", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-33, No. 6, Jun. 1985, pp. 543-545.
Angello Paul S.
Meza Peter J.
Mullins James B.
Triquint Semiconductor, Inc.
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