Single split-gate MOS transistor active pixel sensor cell with a

Details Single split-gate MOS transistor active pixel sensor cell with a Single split-gate MOS transistor active pixel sensor cell with a

1995-10-19

1997-03-04

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257250, 257292, 257317, 257320, 257462, H01L 27148, H01L 31062

Patent

active

056082436

ABSTRACT:
The size of an active pixel sensor cell is reduced by utilizing a single split-gate MOS transistor and a reset gate. The split-gate transistor includes an image collection region which is formed in the drain region and electrically connected to the floating gate of the transistor. Light energy striking the image collection region varies the potential of the floating gate which, in turn, varies the threshold voltage of the transistor. As a result, the current sourced by the transistor is proportional to the received light energy.

REFERENCES:
patent: 5191398 (1993-03-01), Mutoh
patent: 5289023 (1994-02-01), Mead
Yadid-Pecht, O. et al., "A Random Access Photodiode Array for Intelligent Image Capture", IEEE Transactions of Electron Devices, vol. 38, No. 8, Aug. 1991.
Fossum, Eric R., "Active-Pixel Sensors Challenge CCDs", Laser Focus World, Jun. 1993, pp. 83-87.
Dickinson, A. et al., "TP 13.5: A 256.times.256 CMOS Active Pixel Image Sensor with Motion Detection," ISSCC95/Session 13/Image Sensors and Systems/Paper TP 13.5, 1995, IEEE International Solid-State Circuits Conference, pp. 226-227.

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