Single source thermal ablation method for depositing organic-ino

Details Single source thermal ablation method for depositing organic-ino Single source thermal ablation method for depositing organic-ino

1998-11-13

2000-09-12

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Chemical vapor deposition

427250, 42725514, 42725523, 4272556, 427294, 4273831, 427384, 427587, 427590, C23C 854

Patent

active

06117498&

ABSTRACT:
In order to form a film of organic-inorganic hybrid material, such as a perovskite material, in a selected stoichiometric ratio upon a surface of a substrate, the proposed method entails a number of simple steps. First, a substrate and a selected quantity of an organic-inorganic hybrid material are placed in a chamber, with the hybrid material being placed on a heater. Then, the hybrid material is heated sufficiently, as by passing an electric current through the heater, to cause its total ablation. As a consequence, a film of the organic-inorganic hybrid material, in the aforesaid selected stoichiometric ratio, reassembles as a film upon a surface of the substrate. During the heating step, the chamber may be either evacuated to a pressure below 10.sup.-3 torr or filled with an inert gas, such as nitrogen.

REFERENCES:
patent: 5871579 (1999-02-01), Liang et al.

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