Single-source precursors for ternary chalcopyrite materials,...

Details Single-source precursors for ternary chalcopyrite materials,... Single-source precursors for ternary chalcopyrite materials,...

2006-01-31

2006-01-31

Nazario-Gonzalez, Porfirio (Department: 1621)

Organic compounds -- part of the class 532-570 series

Organic compounds

Heavy metal containing

C556S021000, C556S030000, C556S031000, C427S248100, C427S587000, C427S593000, C117S003000, C117S084000

Reexamination Certificate

active

06992202

ABSTRACT:
A single source precursor for depositing ternary I-III-VI2chalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VI2stoichiometry “built into” a single precursor molecular structure which degrades on heating or pyrolysis to yield the desired I-III-VI2ternary chalcopyrite. The single source precursors effectively degrade to yield the ternary chalcopyrite at low temperature, e.g. below 500° C., and are useful to deposit thin film ternary chalcopyrite layers via a spray CVD technique. The ternary single source precursors according to the invention can be used to provide nanocrystallite structures useful as quantum dots. A method of making the ternary single source precursors is also provided.

REFERENCES:
Chhipa et al., Indian Journal of Chemistry, vol. 28A, No. 5, pp 396-399 (May 1989).
Applied Organometallic Chemistry Homepage, vol. 16, No. 11, Wiley-Interscience (Nov. 29, 2004).
Contreas, M., et al., “Progress Toward 20% Efficiency in Cu(In,Ga)Se2 Polycrystalline Thin-Film Solar Cells”,Prog. Photovolt. Res. App.,1999, 7, pp. 311-316.
Hoffman, D., et al., “Thin-Film Solar Array Earth-Orbit Mission Applicability Assessment”,XVII Space Photovoltaic Research and Tech. Conf.,2001.
Bailey, S.G., et al., “Space Photovoltaics”,Prog. Photovolt. Res. App.,1998, 6, 1-14.
Schock, H.W., et al., “Development of CIS Solar Cells for Space Applications”, Eds. Schmid, J., et al.,2thWorld Photovolt. Solar Energy Conf.,Vienna, 1998, pp. 1-4.
Tarrant, D., et al., “I-III-VI2Multinary Solar Cells Based on CuInSe2”,Proc. 23rdIEEE Photovoltaic Specialist Conference,1993, ABSTRACT.
Basol, B.M., et al., “Cu(In,Ga)Se2Thin Films and Solar Cells Prepared by Selenization of Metallic Precursors”,J. of Vacuum Science and Technology A, 1996, 14A, pp. 2251-2256.
Probst, V., et al., “Rapid CIS-Process for High Efficiency PV-Modules: Development Towards Large Area Processing”,Thin Solid Films, 2001, 387, pp. 262-267.
Dimmler, B., et al., “Scalability and Pilot Operation in Solar Cells of CuInSe2and Their Alloys”,Prog. Photovolt. Res. Appl.,1998, 6, pp. 193-199.
Park, S.C., et al., “Fabrication of CuInSe2Films and Solar Cells by the Sequential Evaporation of In2Se3and Cu2Se Binary Compounds”,Sol. Energy Mater. Sol. Cells, 2001, 69, pp. 99-105.
Guillen, C., et al. “Recrystallization and Components Redistribution Processes in Electrodeposited CuInSe2Thin Films”,Thin Solid Films, 2001, 387, pp. 57-59.
Eberspacher, C., et al., “Thin-Film CIS Alloy PV Materials Fabricated Using Non-Vacuum, Particles-Based Techniques”,Thin Solid Films, 2001, 387, pp. 18-22.
Klenk, M., et al., “Properties of Flash Evaporated Chalcopyrite Absorber Films and Solar Cells”,Thin Solid Films, 2001, 387, pp. 47-49.
Dzionk, C., et al., “Phase Formation During the Reactive Annealing of Cu-In Films in H2S Atmosphere”,Thin Solid Films, 1997, 299, pp. 38-44.
Krunks, M., et al., “Composition and Structure of CuInS2Films Prepared by Spray Pyrolysis”,Thin Solid Films, 2000, 361-2, pp. 61-64.
Artaud, M.C., et al., “CuInSe2Thin Films Grown by MOCVD: Characterization, First Devices”,Thin Solid Films, 1998, 324, pp. 115-123.
Jones, A.C., et al., “CVD of Compound Semiconductors: Precursors Synthesis, Development & Application”,VCH Press, 1997, pp. 42-99.
Nomura, R., et al., “Preparation of Copper-Indium-Sulfide Thin Films by Solution Pyrolysis of Organometallic Sources”,Chem. Let.,1988, pp. 1849-1850.
Nomura, R., et al., “Oxygen-or Sulphur-Containing Organoindium Compounds for Precursors of Indium Oxide and Sulphide Thin Films”,Polyhedron, 1990, 9, pp. 361-366.
Nomura, R., et al., “Preparation of CuInS2Thin Films by Single-Source MOCVD Process Using Bu2In(SPr)Cu(S2CNPri2)”,J. Mater. Chem.,1992, pp. 765-766.
Nomura, R., et al., “Preparation of CuIn5S8Thin Films by Single-Source Organometallic Chemical Vapour Deposition”,Thin Solid Films, 1992, 209, pp. 145-147.
Hirpo, W., et al., Synthesis of Mixed Copper-Indium Chalcogenolates. Single Source Precursors for the Photovoltaic Material CuInQ2(Q =S, Se),J. Am. Chem. Soc.,1993, 115, pp. 1597-1599.
Hollingsworth, J.A., et al., “Spray CVD of Copper Indium Disulfide Films: Control of Microstructure and Crystallographic Orientation”,Chem. Vap. Deposition, 1999, 5, pp. 105-108.
Hollingsworth, J.A., et al., “Spray Chemical Vapor Deposition of CuInS2Thin Films for Application in Solar Cell Devices”,Mat. Res. Soc. Symp. Proc.,1998, 495, ABSTRACT.
Harris, J.D., et al., “Using Single Source Precursors and Spray Chemical Vapor Deposition to Grow Thin-Film CuInS2”,Proc. of the 28thIEEE Photovoltaic Specialists Conference, 2000, ABSTRACT.
Banger, Kulbinder K., et al., “Synthesis and Characterization of the First Liquid Single-Source Precursors for the Deposition of Ternary Chalcopyrite (CuInS2) Thin Film Materials”,Chem. Mater.,2001, 13(11), pp. 3827-3829.
Hollingsworth, J.A., “Chemical Routes to Nanocrystalline and Thin-Film III-VI and I-III-VI Semiconductors”, Dissortation, Washington University, 1999.
Drago, R.S., et al., “E and C Parameters from Hammett Substituent Constants and Use of E and C to Understand Cobalt-Carbon Bond Energies”,Inorg. Chem.,1987, 26, pp. 9-14.
Riga, A. et al., “Process Development and Synthesis of CuInSe2and CuInS2Precursors of Chemical Vapor Deposition Aided by Thermal Analytical Techniques”,NATAS Annual Conference on Thermal Analysis Applications, 2001, ABSTRACT.
Hollingsworth, J.A., et al., “Single Source Precursors for Fabrication of I-III-V12 Thin-Film Solar Cells Via Spray CVD”,Thin Solid Films, 2003 431-432, pp. 63-67.
Banger, K.K., et al., “A Review of Single Source Precursors for the Deposition of Ternary Chalcopyrite Materials”,NASA Conference Publication(2002),17thSpace Photovoltaic Research and Technology Conference, 2001), pp. 115-125.
Deivaraj, T.C., et al., “Novel Bimetallic Thiocarboxylate Compounds as Single-Source Precursors to Binary and Ternary Metal Sulfide Materials”,Chemistry of Materials, 2003, 15(12), pp. 2383-2391.
Jin, M. H., et al., “Thin Film Cu1nS2 Prepared by Spray Pyrolysis with Single-Source Precursors”,Conference Record of the IEEE Photovoltaic Specialists Conference, 2002, 29th, ABSTRACT.
Afzaal, M., et al., “New Approach Towards the Deposition of I-III-VI Thin Films”,Materials Research Society Symposium Proceedings, 2002, pp. 185-190.
Banger, K.K., et al., “Ternary Single-Source Precursors for Polycrystalline Thin-Film Solar Cells”,Applied Organometallic Chemistry, 2002, 16(11), pp. 617-627.
Banger, K.K., et al., “Facile Modulation of Single Source Precursors: The Synthesis and Characterization of Single Source Precursors for Deposition of Ternary Chalcopyrite Materials”,Thin Solid Films, 2002, 403-404, 390-395.
Deivaraj, T.C., et al., “Single-Source Precursors to Ternary Silver Indium Sulfide Materials”,Chemical Communications, 2001, 22, pp. 2304-2305.
Banger, Kulbinder K., et al., “Facile Modulation and Preparation of Single Source Precursors for Low-Temperature Deposition of Ternary Chalcopyrite Materials”,Abstracts of Papers, 222ndACS National Meeting, Aug. 26-30, 2001,American Chemical Society, ABSTRACT.
Deivaraj, C.T., et al., “Synthesis and Structure of [(Ph3P)2Ag(μ-Cl)(μ-SC{O}Ph)In(SC{O}Ph)2]”,Inorganica Chemica Acta, 336, 2002, pp. 111-114.
Harris, J.D., et al., “Characterization of Cu1nS2 Films Prepared by Atmospheric Pressure Spray Chemical Vapor Deposition”,Materials Science&Engineering, 2003, B98(2), pp. 150-155.
Shibata, J., et al., “Transmission Electron Microscopic Studies of LiNb0.5Ta0.5O3 Films Deposited on Sapphire Substrates by Thermal Pl

Affiliated with

Also associated with

Rating

Single-source precursors for ternary chalcopyrite materials,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Single-source precursors for ternary chalcopyrite materials,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single-source precursors for ternary chalcopyrite materials,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3544773