Single reactor, multi-pressure chemical vapor deposition for...

Details Single reactor, multi-pressure chemical vapor deposition for... Single reactor, multi-pressure chemical vapor deposition for...

2005-04-05

2005-04-05

Norton, Nadine G. (Department: 1765)

Coating apparatus

Gas or vapor deposition

C118S719000, C117S200000, C117S084000, C117S088000

Reexamination Certificate

active

06875279

ABSTRACT:
An apparatus and method for forming at least a portion of an electronic device include a High Vacuum-Chemical Vapor Deposition (UHV-CVD) system and a Low Pressure-Chemical Vapor Deposition (LPCVD) system using a common reactor. The invention overcomes the problem of silicon containing wafers being dipped in HF acid prior to CVD processing, and the problem of surface passivation between processes in multiple CVD reactors.

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