Single-polysilicon CMOS active pixel

Details Single-polysilicon CMOS active pixel Single-polysilicon CMOS active pixel

1994-11-22

1996-11-19

Garber, Wendy

Television

Camera, system and detail

Solid-state image sensor

348294, 257290, H04N 5335

Patent

active

055767630

ABSTRACT:
The single-polysilicon active pixel comprises a photo site located on a substrate for generating and storing charge carriers, the charge carriers being generated from photonic energy incident upon the photo site and semiconductor substrate, a photo gate, a transfer transistor and output and reset electronics. The gate of the transfer transistor and the photo gate are defined in a single layer of polysilicon disposed on the semiconductor substrate. The source of transfer transistor is a doped region of substrate, referred to as a coupling diffusion, which provides the electrical coupling between the photo gate and the transfer transistor. The coupling diffusion allows for the transfer of a signal stored in a photo site under the photo gate to the output electronics for processing. The single-polysilicon active pixel may be operated by biasing the transfer transistor to the low operating voltage of the pixel, for example, 0 volts. By virtue of the structure of the single-polysilicon active pixel, this mode of operation results in the same timing as if the transfer transistor were clocked, but neither a clock nor the associated driving circuitry are required. However, there is little no tendency for image lag as occurs in double polysilicon active pixels when they are operated in a manner which avoids clocking the transfer gate.

REFERENCES:
patent: 5436476 (1995-07-01), Hynecek
patent: 5471515 (1995-11-01), Fossum et al.
Fossum, E. R., "Active Pixel Sensors: Are CCD's Dinosaurs?," Proceedings of the SPIE, vol. 1900, Charge-Coupled Devices and Solid State Optical Sensors III, Feb. 2-3, 1993, San Jose, California, pp. 2-14.
Fossum, E. R., "Assessment of Image Sensor Technology for Future Nasa Missions," Proceedings of the SPIE, vol. 2172, Charge-Coupled Devices and Solid State Optical Sensors IV, pp. 1-16.
Mendis, S., et al., "CMOS Active Pixel Image Sensor," IEEE Transactions on Electron Devices, vol. 41, No. 3, Mar. 1994, pp. 452-453.
Mendis, S. K., et al., "CMOS Active Pixel Image Sensors For Highly Integrated Imaging Systems," Prepublication copy; accepted for publication by IEEE Journal of Solid State Circuits, 18 pages.

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