Static information storage and retrieval – Floating gate – Disturbance control
Reexamination Certificate
2005-12-21
2008-10-14
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Floating gate
Disturbance control
C365S051000, C365S063000
Reexamination Certificate
active
07436701
ABSTRACT:
A single poly EPROM comprises a floating gate (10), a control gate (12), a source (16) and a drain (18). The control gate (12) is positioned laterally of a channel between the source (16) and the drain (18). The floating gate (10) is positioned above the channel and above the control gate (12). The single poly EPROM device further comprises an additional gate (40) above the floating gate (10) and a control. The control is connected to the additional gate (40) for controlling a voltage at the floating gate (10) in order to prevent the floating gate (10) from being unintentionally charged or discharged.
REFERENCES:
patent: 5790455 (1998-08-01), Caywood
patent: 5798548 (1998-08-01), Fujiwara
patent: 6433609 (2002-08-01), Voldman
patent: 6535430 (2003-03-01), Ogura et al.
patent: 2001/0025980 (2001-10-01), Bottini et al.
Brady III Wade J.
Nguyen Van-Thu
Telecky , Jr. Frederick J.
Texas Instruments incorporated
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